PMEM4020PD is a PNP transistor/Schottky diode module with 600 mW total power dissipation, high current capability, reduced required PCB area, reduced pick and place costs, and small plastic SMD package. The PNP transistor has low collector-emitter saturation voltage, and the Schottky diode has ultra high-speed switching, very low forward voltage, and guard ring protection. It is suitable for DC-to-DC converters, inductive load drivers, general purpose load drivers, and reverse polarity protection circuits.
This datasheet describes the PMEM4020PD, a discrete semiconductor module combining a PNP transistor with low collector-emitter saturation voltage and a planar Schottky barrier diode. The device is housed in a small plastic SOT457 (SC-74) surface-mounted package designed to reduce PCB area and pick-and-place costs. Key features include high current capability, ultra-high-speed switching for the diode, and guard ring protection for stress reliability.
| Total power dissipation (Tamb < 25 °C) | 600 mW |
|---|---|
| Collector current (DC) | 0.75 A |
| Peak collector current | 3 A |
| Continuous reverse voltage (Diode) | 20 V |
| Continuous forward current (Diode) | 1 A |
| Junction temperature | 150 °C |
| Package type | SOT457 |
The module is suitable for DC-to-DC converters, inductive load drivers, general purpose load drivers, and reverse polarity protection circuits.
The maximum junction temperature (Tj) for the device is 150 °C.
Yes, the NPN complement of this module is the PMEM4020ND.