The document describes the features and characteristics of the PMEG6010AED Low VF (MEGA) Schottky barrier diode, including low switching losses, very high surge current absorption capability, fast recovery time, guard ring protection, and plastic SMD package. It is suitable for low power switched-mode power supplies, rectification, and polarity protection.
The document is a product specification for the PMEG6010AED, a planar Schottky barrier diode encapsulated in a SOT457 (SC-74) plastic package. Key features include low switching losses, very high surge current absorption capability, and fast recovery time. It is designed for applications such as low power switched-mode power supplies, rectification, and polarity protection.
The datasheet details limiting values, electrical characteristics (such as forward voltage and reverse current), and thermal characteristics (junction-to-ambient thermal resistance). It also includes graphical data for forward and reverse current versus voltage, as well as diode capacitance versus reverse voltage, and provides a package outline with dimensions.
| Continuous reverse voltage | 60 V |
|---|---|
| Continuous forward current | 1 A |
| Non-repetitive peak forward current | 17.5 A |
| Continuous forward voltage (IF=0.1A) | 400 mV |
| Continuous forward voltage (IF=1A) | 650 mV |
| Diode capacitance | 60 pF |
| Thermal resistance (junction to ambient) | 230 K/W |
| Storage temperature | -65 to +150 °C |
It is suitable for low power switched-mode power supplies, rectification, and polarity protection.
The diode is encapsulated in a SOT457 (SC-74) small plastic package.
The maximum junction temperature is +150 °C.