This document describes the features and characteristics of the PMEG2010EV low VF MEGA Schottky barrier diode, including forward current, reverse voltage, very low forward voltage, ultra small SMD package, etc. It is suitable for low voltage rectification, high efficiency DC/DC conversion, switch mode power supply, inverse polarity protection, low power consumption applications.
The document is a product specification data sheet for the PMEG2010EV, a discrete semiconductor component. It describes the device as a Planar Maximum Efficiency General Application (MEGA) Schottky barrier diode featuring an integrated guard ring for stress protection within an ultra-small SOT666 plastic surface-mounted package.
Key features highlighted include a forward current rating of 1 A and a reverse voltage rating of 20 V. The device is designed for applications requiring low voltage rectification, high efficiency DC/DC conversion, switch mode power supplies, and inverse polarity protection due to its very low forward voltage drop.
| Forward current (continuous) | 1 A |
|---|---|
| Reverse voltage | 20 V |
| Package type | SOT666 |
| Storage temperature range | -65 to +150 °C |
| Junction temperature (max) | 125 °C |
It is suitable for low voltage rectification, high efficiency DC/DC conversion, switch mode power supply, and inverse polarity protection.
The maximum non-repetitive peak forward current is 8 A under specific pulse conditions.