This datasheet introduces the features of PMEM4010PD, including power dissipation, current capability, PCB area, cost, and package. This product adopts PNP transistor and planar Schottky barrier diode, which has low VCEsat and high current capability, integrated with a guard ring for stress protection, and the package is SOT457 (SC-74) small plastic package.
The Philips PMEM4010PD is a discrete semiconductor module combining a PNP transistor with low saturation voltage and high current capability with a planar Schottky barrier diode. It is housed in a small plastic SOT457 (SC-74) surface-mounted package designed to reduce PCB area and pick-and-place costs.
The device is suitable for applications such as DC/DC converters, inductive load drivers, and general-purpose load drivers. It features a high current capability of 1 A continuous collector current and an ultra-high-speed switching diode with a very low forward voltage.
| Total power dissipation | 600 mW |
|---|---|
| Collector current (DC) | 1 A |
| Peak collector current | 2 A |
| Collector-base voltage | -40 V |
| Continuous reverse voltage (Diode) | 20 V |
| Continuous forward current (Diode) | 1 A |
| Package type | SOT457 |
The marking code for the PMEM4010PD is B2.
The NPN complement of the PMEM4010PD is the PMEM4010ND.