This datasheet provides maximum ratings, characteristic values, and application information for the IXYS IXGH 10N100 and IXGH 10N100A IGBTs.
The document is a technical datasheet for the IXGH 10N100 and IXGH 10N100A Insulated Gate Bipolar Transistors (IGBTs) manufactured by IXYS. It details the device's maximum ratings, including voltage and current limits, as well as characteristic values such as saturation voltage and switching times.
| Collector-Emitter Voltage | 1000 V |
|---|---|
| Continuous Collector Current (25°C) | 20 A |
| Collector Current (90°C) | 10 A |
| Operating Junction Temperature | -55 ... +150 °C |
| Storage Temperature | -55 ... +150 °C |
| Package Type | TO-247 AD |
The device is suitable for AC motor speed control, DC servo and robot drives, DC choppers, and uninterruptible power supplies.
The recommended mounting torque is 1.13 Nm (10 lb.in).
The typical VCE(sat) for the IXGH 10N100 is 3.5 V.