IXFK33N50 / IXFK35N50 MOSFET is a high performance power device produced by IXYS. It adopts international standard package, and has the characteristics of low RDS(on), high power density and easy to install.
This document provides preliminary data for the IXFK33N50 and IXFK35N50 N-Channel Enhancement Mode Power MOSFETs manufactured by IXYS. These devices utilize the HiPerFET™ process and are avalanche rated with high dv/dt capability and low turn-on time.
| Drain-Source Voltage | 500 V |
|---|---|
| Continuous Drain Current | 33 A (IXFK33N50), 35 A (IXFK35N50) |
| Operating Junction Temperature | -55...+150 °C |
| Package Type | TO-264 AA |
| Unclamped Inductive Switching Energy | 2.5 J (IXFK33N50), 45 mJ (IXFK35N50) |
They are suitable for DC-DC converters, synchronous rectification, battery chargers, and switched-mode power supplies.
The maximum operating junction temperature is 150 °C.