IXGH 12N is a high-frequency IGBT produced by IXYS. Its maximum voltage is 600V and its maximum current is 24A. The typical switching time is 55ns. This product has the characteristics of high frequency, high power density, high peak current handling capability, and is suitable for applications such as PFC circuit, AC motor speed control, DC servo and robot drives, switch-mode and resonant-mode power supplies, and high power audio amplifiers.
This document is a technical datasheet for the IXYS IXGH 12N60CD1 Insulated Gate Bipolar Transistor (IGBT). The device utilizes the new generation HDMOSTM process and is housed in an international standard JEDEC TO-247AD package. It features very high frequency switching capabilities and a fast reverse recovery time for its integrated FRED diode.
| Collector-Emitter Voltage (VCE) | 600 V |
|---|---|
| Continuous Collector Current at 25°C (IC) | 24 A |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 2.7 V typ. |
| Package Type | TO-247AD |
| Mounting Torque (M3 screw) | 0.45 Nm |
The device is suitable for PFC circuits, AC motor speed control, DC servo and robot drives, switch-mode power supplies, resonant-mode power supplies, and high power audio amplifiers.
The maximum operating junction temperature (TJ) is +150 °C.