This document describes the features and characteristics of the HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode products produced by IXYS in 2004. These features include low gate resistance, international standard packages, UL 94 V-0 flammability classification, etc. In addition, the product has advantages such as avalanche energy and current rating, and fast intrinsic rectifier.
This document provides preliminary technical data for the IXYS IXFK 24N120Q2 and IXFX 24N120Q2 Power MOSFETs. These N-Channel Enhancement Mode devices are part of the Q-Class HiPerFET™ series, designed with avalanche energy and current ratings, high dv/dt capability, and low intrinsic resistance.
| Package Type | TO-264 |
|---|
The maximum power dissipation is 830 W at a temperature of 25°C.