This document describes the features and characteristics of IXYS' HiPerRFTM Power MOSFETs, including RF capability, low gate resistance, avalanche rating, low package inductance, etc.
This document is a technical datasheet for the IXYS HiPerRF™ 12N100F, an N-channel enhancement mode power MOSFET designed for high-frequency switching applications. The device features low gate resistance, unclamped inductive switching (UIS) rating, and fast intrinsic rectifier capabilities.
| Drain-Source Voltage (VDS) | 1000 V |
|---|---|
| Continuous Drain Current (ID25) | 12 A |
| Peak Pulse Drain Current (IDM) | 48 A |
| Power Dissipation (PD) | 300 W |
| On-Resistance (RDS(on)) | 1.05 Ω |
| Gate Threshold Voltage (VGS(th)) | 3.0 to 5.5 V |
| Reverse Transfer Capacitance (Crss) | 93 pF |
| Total Gate Charge (Qg) | 77 nC |
The maximum junction temperature (TJ) is 150°C.
The device has a maximum drain-source voltage (VDS) of 1000 V.
The continuous drain current (ID) is rated for 12 A at a case temperature of 25°C.
The recommended mounting torque for the TO-247 case style is 1.13 Nm or 10 lb.in.