This document introduces the HiPerFETTM power MOSFET products from IXYS. The product features a double metal process for low gate resistance, international standard packages, and epoxy that meets UL 94 V-0 flammability classification. Additionally, the product has low RDS(on), low Qg, and is rated for voltage and current avalanche. It is suitable for various applications such as DC-DC converters, switched-mode and resonant-mode power supplies, and DC choppers.
This document provides advanced technical data for the IXFH14N100Q2, an N-Channel Enhancement Mode Power MOSFET. Key features include a double metal process for low gate resistance, avalanche energy and current ratings, and a fast intrinsic rectifier. The device is designed for applications such as DC-DC converters, switched-mode power supplies, DC choppers, pulse generation, and laser drivers.
| Continuous Drain Current (I_D) | 14 A |
|---|---|
| Pulse Drain Current (I_DM) | 56 A |
| Operating Junction Temperature (T_J) | -55 ... +150 °C |
| Package Type | TO-247 AD |
| Gate-Source Threshold Voltage (V_GS(th)) | 3.0 V to 50 V |
| On-Resistance (R_DS(on)) | 0.90 Ohm |
| Input Capacitance (C_iss) | 2700 pF |
The device is suitable for DC-DC converters, switched-mode and resonant-mode power supplies, DC choppers, pulse generation, and laser drivers.
Yes, the datasheet lists the device as having avalanche energy and current ratings.