IXFH 140N10P is a N-Channel Enhancement Mode Fast Intrinsic Diode, Avalanche Rated from IXYS with Unclamped Inductive Switching (UIS) rated, Low package inductance - easy to drive and to protect.
This document provides technical specifications for the IXYS IXFH 140N10P, a N-Channel Enhancement Mode Power MOSFET with a fast intrinsic diode and avalanche rating. It covers electrical characteristics such as drain-source voltage, on-resistance, and switching times under various test conditions.
| Drain-Source Voltage | 100 V |
|---|---|
| Continuous Drain Current | 140 A |
| On-Resistance | 11 m Ω |
| Package Type | TO-247 |
| Operating Junction Temperature | -55 ... +175 °C |
The maximum junction temperature is 175 °C.
The mounting torque is 1.13 Nm or 10 lb.in.
Yes, it is an avalanche rated Power MOSFET.