14N80 and 15N80 are N-Channel Enhancement Mode high dv/dt, low trr, HDMOSTM family power MOSFETs produced by IXYS company. Their features include international standard packages, low RDS (on), HDMOSTM process, rugged polysilicon gate cell structure, unclamped inductive switching (UIS) rated, low package inductance, easy to drive and protect, fast intrinsic rectifier, applied to DC-DC converters, synchronous rectifiers, battery chargers, switched-mode and resonant-mode power supplies, DC choppers, AC motor control, temperature and lighting controls, low voltage relays.
This document provides preliminary technical data for the IXFH14N80 and IXFH15N80 N-channel enhancement mode power MOSFETs from IXYS. These devices belong to the HiPerFET™ family, utilizing an HDMOS™ process with a rugged polysilicon gate cell structure designed for high dv/dt performance.
| Voss (Max) | 800 V |
|---|---|
| Continuous Drain Current (IXFH14N80) | 14 A |
| Continuous Drain Current (IXFH15N80) | 15 A |
| Package Type | TO-247 AD |
| Operating Temperature Range | -55 ... +150 °C |
The maximum continuous drain current for the IXFH15N80 is 15 A at a temperature of 25°C.
The devices operate within a temperature range from -55 to +150 °C.
The specified mounting torque for the device is 1.13 Nm or 10 lb.in.