The document describes IXYS' high-power MOSFET products, including features and characteristics such as low RDS(on), easy mounting, space savings, high power density, etc.
This document provides technical specifications and characteristics for the IXYS IXFH 15N80Q and IXFT 15N80Q Power MOSFETs. These devices are N-channel enhancement mode, avalanche rated, high dv/dt, and low Q-class components available in TO-247 (AD) and TO-268 (D3) packages.
The datasheet details maximum ratings such as a drain-source voltage of 800V and continuous current of 15A. It includes electrical characteristics like on-resistance, gate charge, and capacitance values, along with thermal resistance data and safe operating area curves.
| Drain-Source Voltage (V_DSS) | 800 V |
|---|---|
| Continuous Drain Current (I_D) | 15 A |
| On-Resistance (R_DS(on)) | 0.60 Ohms |