IXYS 15N100Q HiPerFET Power MOSFET Datasheet

This datasheet provides information about IXFH 15N100Q, including maximum ratings, characteristic values, symbols, and packages.

Brand: IXYS
Category: Other Electronics
Document type: Datasheet
Language: English
Pages: 2
File format: PDF
File size: 134 KB
Published: 15 June, 2012
Updated: 30 September, 2023
MD5 checksum: 8EE129A714A2F2A40CC25AF443AE7627
PDF: IXYS 15N100Q HiPerFET Power MOSFET Datasheet PDF

About this manual

This document is a preliminary datasheet for the IXYS HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode, specifically the 15N100Q model. It details the device's performance parameters, including maximum voltage ratings, on-resistance, and avalanche energy capabilities.

What's inside

Maximum Ratings
Electrical Characteristics
Package Dimensions
Terminal Information
Source-Drain Diode Characteristics
Features
Advantages

Specifications

Drain-Source Voltage (VDS)	1000 V
Continuous Drain Current (ID)	15 A
On-Resistance (RDS(on))	0.7 Ω
Thermal Resistance Junction-to-Case (RthJC)	0.35 K/W
Reverse Recovery Time (trr)	250 ns

Frequently asked questions

What is the maximum operating temperature for the 15N100Q?

The junction temperature (TJ) ranges from -55°C to +150°C.

What is the maximum continuous drain current for the 15N100Q at 25°C?

The maximum continuous drain current is 15 A when the temperature is 25°C.

What is the maximum operating junction temperature?

The device can operate with a junction temperature ranging from -55°C to +150°C.

What is the maximum drain-source voltage rating?

The maximum drain-source voltage is rated at 1000 V.

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