This data sheet lists the maximum ratings, characteristic values, package information, etc. of HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family TO-247 AD (IXFH) TO-204 AA (IXFM).
This document provides technical specifications and characteristics for the IXFH/IXFM10N90, IXFH/IXFM12N90, and IXFH13N90 N-Channel Enhancement Mode High dv/dt, Low t,, HDMOS™ Family Power MOSFETs. The devices feature a rugged polysilicon gate cell structure and are available in TO-247 (AD) and TO-204 (AA) packages.
| Voltage (Voss) | 900 V |
|---|---|
| Continuous Current (Ios) | 10A / 12A / 13A |
| Operating Temperature Range | -55°C to +150°C |
They belong to the HiPerFET™ Family.
The maximum continuous drain current for the 10N90 model is 10 A at 25°C.
The maximum mounting torque for the TO-204 package is 1.13 Nm.