IXFH 13N80 is a N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low Qg Power MOSFET
This document provides preliminary data for the IXFH 13N80Q and IXFT 13N80Q, which are N-Channel Enhancement Mode Power MOSFETs featuring HiPerFET technology. These devices are avalanche rated with high dv/dt capability and low Qg, available in TO-247 and TO-268 packages.
| Drain-Source Voltage | 800 V |
|---|---|
| Continuous Drain Current | 13 A |
| Operating Junction Temperature | -55 ...+150 °C |
| On-Resistance | 0.700 Ohms |