IXFH/IXFM 11N80 and 13N80 are IXYS's high voltage N-channel enhancement mode power MOSFETs, with low RDS(on), high dv/dt and low trr characteristics, and TO-247 and TO-204 packages.
This document is a datasheet for the IXYS HiPerFETTM Power MOSFET N-Channel Enhancement Mode family, specifically the IXFH and IXFM series. It covers two models: the 11N80 and 13N80. The document details maximum ratings, electrical characteristics, and source-drain diode properties for both the TO-247 AD (IXFH) and TO-204 AA (IXFM) packages. This manual is written in Chinese.
| Drain-Source Voltage (VDS) | 800 V |
|---|---|
| Continuous Drain Current (ID) | 11 A (11N80), 13 A (13N80) |
| Peak Pulse Drain Current (IDM) | 44 A (11N80), 52 A (13N80) |
| Thermal Resistance Junction-to-Case (RthJC) | 0.42 K/W |
| Reverse Recovery Time (trr) | 250 ns (TJ=25°C) |
They are suitable for DC-DC converters, synchronous rectification, battery chargers, and switched-mode power supplies.
The maximum junction temperature (TJ) is 150°C.
The mounting torque is 1.13 Nm (10 lb.in).