This document describes the features and characteristics of the FDH700 ultra fast diode from Fairchild Semiconductor Corporation, including maximum junction temperature, total power dissipation, working inverse voltage, and forward current.
This document is a datasheet for the Fairchild FDH700 Ultra Fast Diode. It provides absolute maximum ratings such as a storage temperature range of -65 to +200 °C and a total power dissipation of 250 mW at 25°C. The device features a working inverse voltage of 20 V and a DC forward current of 150 mA.
| Storage Temperature | -65 to +200 °C |
|---|---|
| Maximum Junction Temperature | -65 to +175 °C |
| Total Power Dissipation at 25°C | 250 mW |
| Derate above 25°C | 1.67 mW/°C |
| Working Inverse Voltage | 20 V |
| DC Forward Current | 150 mA |
| Breakdown Voltage | 30 V |
| Reverse Leakage | 50 nA |
| Forward Voltage (IF = 10mA) | 760 to 900 mV |
| Reverse Recovery Time | 900 ps |
| Diode Capacitance | 1.5 pF |
The working inverse voltage is 20 V.
The maximum junction temperature is -65 to +175 °C.
The DC forward current rating is 150 mA.