This document is the user manual of FDH50N50/FDA50N50 500V N-Channel MOSFET device, introduces the characteristics, features and application scenarios of the device.
This document provides technical specifications and performance characteristics for the FDH50N50 and FDA50N50 N-Channel enhancement mode power field effect transistors. These devices utilize Fairchild's proprietary UniFET technology to minimize on-state resistance and provide superior switching performance, making them suitable for high-efficiency switched mode power supplies and active power factor correction applications.
The datasheet details absolute maximum ratings, electrical characteristics including off and on states, dynamic parameters such as capacitance and gate charge, and typical performance curves. It also includes mechanical dimensions for the TO-247AD and TO-3P packages.
| Drain-Source Voltage | 500 V |
|---|---|
| Continuous Drain Current (25°C) | 48 A |
| Power Dissipation (25°C) | 625 W |
| Operating Temperature Range | -55 to +150 °C |
| Thermal Resistance (Junction-to-Case) | 0.2 °C/W |
The device supports a continuous drain current of 48 A when the temperature is 25°C.
These devices can operate and be stored in a range from -55 to +150 °C.
The device is rated for 1868 mJ of single pulsed avalanche energy.