BCR183./SEMB11 PNP Silicon Digital Transistor, which is used in switching circuit, inverter, interface circuit, driver circuit, built-in bias resistor (R1 = 10kΩ , R2 = 10kΩ), 6-PIN packages, with two (galvanic) internal isolated transistors with good matching in one package.
This document is a datasheet for the Infineon BCR183.../SEMB11 series of PNP silicon digital transistors. These components are designed for use in switching circuits, inverters, interface circuits, and driver circuits. A key feature is the built-in bias resistor (Ry = 10kΩ, Ro = 10kΩ). For 6-pin packages, the devices include two galvanically isolated transistors with good matching within a single package.
| Collector-emitter voltage | 50 V |
|---|---|
| Collector-base voltage | 50 V |
| Emitter-base voltage | 10 V |
| Input on voltage | 20 V |
| Collector current | 100 mA |
| Junction temperature | 150 °C |
| Storage temperature | -65 ... 150 °C |
| Transition frequency | 200 MHz |
| Collector-base capacitance | 3 pF |
The built-in bias resistor has a value of Ry = 10kΩ and Ro = 10kΩ.
Yes, 6-pin packages contain two galvanically internal isolated transistors with good matching in one package.