BFS481 is a NPN Silicon RF Transistor for low-noise, high-gain broadband amplifier at collector currents from 0.5 mA to 12 mA.
The Infineon BFS481 is an NPN Silicon RF Transistor designed for low-noise, high-gain broadband amplifier applications. It features two galvanically isolated transistors within a single SOT363 package, suitable for collector currents ranging from 0.5 mA to 12 mA.
| Collector-emitter voltage | 12 V |
|---|---|
| Collector current | 20 mA |
| Total power dissipation | 175 mW |
| Junction temperature | 150 °C |
| Transition frequency | 8 GHz |
| Noise figure | 1.45 dB |
| Package type | SOT363 |
The device is designed for low-noise, high-gain broadband amplifier at collector currents from 0.5 mA to 12 mA.
The package contains two galvanically isolated transistors.
The maximum junction temperature is 150 °C.