BFS380L6 is an NPN silicon RF transistor with high current capability and low noise figure, suitable for wide dynamic range applications. The transistor operates at low voltage and is ideal for low phase noise oscillators up to 3.5 GHz.
The document provides preliminary technical specifications for the Infineon BFS380L6, an NPN Silicon RF Transistor designed for wide dynamic range applications. Key features include a built-in two-transistor structure (TR1, TR2), low voltage operation, and suitability for low phase noise oscillators up to 3.5 GHz with a typical noise figure of 1.1 dB at 1.8 GHz.
The datasheet details maximum ratings such as collector-emitter voltage and total power dissipation, alongside electrical characteristics including DC current gain, transition frequency, and various capacitance values. It also lists AC performance metrics like noise figure, power gain, transducer gain, third-order intercept point (IP3), and 1dB compression point at specific frequencies.
| Collector-emitter voltage (VcEO) | 6 V |
|---|---|
| Total power dissipation | 380 mW |
| Junction temperature (Tj) | 150 °C |
| Transition frequency (Fr) | 14 GHz |
| Collector-base capacitance (Cob) | 0.5 pF |
| Noise figure at 1.8 GHz | 1.3 dB (typ) |
The device supports a maximum collector current of 80 mA.
The total power dissipation is rated at 380 mW.
The low noise figure is 1.1 dB when operating at 1.8 GHz.