BGA427 is a Si-MMIC-Amplifier from SIEGET with 50 ohm gain block, unconditional stability, 2 V to 5 V typical voltage, 25 mA current, 1.8 GHz gain of 18.5 dB, 1.8 GHz reverse isolation of 35 dB, 150 mW total power dissipation and 120 °C junction temperature.
The document is a technical datasheet for the BGA427 Si-MMIC amplifier manufactured by Infineon Technologies. It details the device's performance across various frequencies, including insertion power gain, noise figure, and output intercept point under different voltage and current conditions.
The datasheet includes comprehensive electrical characteristics tables, S-parameter data, and transistor chip data compatible with Berkeley-SPICE 2G.6 syntax. It also provides package equivalent circuit values and typical application circuit diagrams for integration into 50-ohm systems.
| Device current | 25 mA |
|---|---|
| Device voltage | 6 V |
| Junction temperature | 150 °C |
| Ambient temperature range | -65 ... 150 |
| Insertion power gain at 1.8 GHz | 18.5 dB |
| Noise figure at 1.8 GHz | 2.2 dB |
| Reverse isolation at 1.8 GHz | 35 dB |
| Output Intercept Point (IP3out) | +7 dBm |
The typical device voltage ranges from 2 V to 5 V.
The maximum junction temperature is 150 °C.
Yes, the device is unconditionally stable.