Infineon BFS480 NPN Silicon RF Transistor Datasheet

BFS480 is an NPN silicon RF transistor designed for low noise, low-power amplifiers in mobile communication systems such as pagers and cordless telephones. It operates at collector currents ranging from 0.2 mA to 8 mA, with a transition frequency (fT) of 7 GHz and a gain (F) of 1.5 dB at 900 MHz. The package contains two internally isolated transistors.


Infineon BFS480 NPN Silicon RF Transistor Datasheet - cover page
Brand
Infineon
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
6
File format
PDF
File size
57 KB
Published
01 August, 2012
Updated
13 October, 2026
MD5 checksum
37481A281762A584B98C99F16EA5C3B1

About this manual

The document describes the BFS480 as an NPN Silicon RF Transistor featuring two galvanically isolated transistors within a single SOT363 package. It is specifically engineered for low noise, low-power amplification in mobile communication systems such as pagers and cordless telephones, operating effectively at collector currents ranging from 0.2 mA to 8 mA with an fT of 7 GHz.

What's inside

  • Maximum Ratings
  • Electrical Characteristics DC
  • Electrical Characteristics AC
  • Total Power Dissipation
  • Permissible Pulse Load
  • Package Pin Configuration

Specifications

Collector-emitter voltage (VCEO)8 V
Junction temperature (Tj)150 °C
Noise figure (F) at 900 MHz1.5 dB

Frequently asked questions

What is the intended application for the BFS480 transistor?

It is designed for low noise, low-power amplifiers in mobile communication systems such as pagers and cordless telephones.

How many transistors are inside the BFS480 package?

The device contains two galvanically isolated transistors in one package.

What is the maximum collector current rating?

The maximum collector current (IC) is rated at 10 mA.

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