BUZ 73AL is a voltage adjustable power transistor manufactured by Infineon, with a maximum voltage of 200V, a maximum current of 5.5A, and a typical on-resistance of 0.6Ω. It is packaged in a TO-220AB package.
This document is a technical datasheet for the Infineon Technologies BUZ73AL, an N-channel enhancement mode SIPMOS power transistor. The device features avalanche rating and logic-level operation, designed for use in various power switching applications.
The datasheet provides comprehensive electrical characteristics including static parameters such as drain-source breakdown voltage (200 V) and on-resistance, dynamic characteristics like capacitance and switching times, and reverse diode specifications. It also includes graphical representations of safe operating areas, transient thermal impedance, and output/transfer characteristics.
| Continuous drain current (Tc = 37°C) | 55 A |
|---|---|
| Pulsed drain current (Tj = 25°C) | 22 A |
| Operating temperature range | -55 to +150 °C |
| Power dissipation (Tc = 25°C) | 40 W |
Yes, it is an N-channel Enhancement mode SIPMOS Power Transistor.
The maximum continuous drain current (I_D) is 55 A when the case temperature (T_C) is 37°C.
The gate-source voltage (V_GS) must not exceed +20 V or go below -20 V.
The maximum power dissipation (P_D) is 40 W when the case temperature (T_C) is 25°C.