NXP BFS466L6 NPN Silicon RF Twin Transistor Preliminary Data Sheet

BFS466L6 is a dual NPN Silicon RF transistor, suitable for low voltage/low current applications. It is ideal for VCO modules and low noise amplifiers.


NXP BFS466L6 NPN Silicon RF Twin Transistor Preliminary Data Sheet - cover page
Brand
Infineon
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
4
File format
PDF
File size
83 KB
Published
01 August, 2012
Updated
30 September, 2023
MD5 checksum
360781F0C3FD673CD30088AD6F4345EB

About this manual

The NXP BFS466L6 is an NPN Silicon RF Twin Transistor designed for low voltage and low current applications. It is particularly ideal for use in VCO modules and low noise amplifiers. The device features a world's smallest SMD 6-pin leadless package and integrates two transistors (TR1 and TR2) with specific die designs (BFR460L3 and BFR360L3 respectively).

What's inside

  • Maximum Ratings
  • Thermal Resistance
  • DC Characteristics
  • AC Characteristics
  • Noise Figure
  • Power Gain
  • Transducer Gain
  • Third Order Intercept Point
  • 1dB Compression Point

Specifications

Collector-emitter voltage (VCEO)4.5V (TR1), 6V (TR2)
Collector current (IC)50mA (TR1), 35mA (TR2)
Noise figure (TR1 at 1.8 GHz)1.1dB
Noise figure (TR2 at 1.8 GHz)1.0dB
Package typeSMD 6-pin leadless

Frequently asked questions

What are the internal transistor types for the BFS466L6?

The device contains two transistors: TR1 uses the BFR460L3 die and TR2 uses the BFR360L3 die.

Is the BFS466L6 suitable for VCO modules?

Yes, it is ideal for VCO modules and low noise amplifiers.

What is the maximum junction temperature?

The maximum junction temperature (Tj) is 150°C for both TR1 and TR2.

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