BFS17S is a NPN silicon RF transistor for broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA
The document is a technical datasheet for the Infineon Technologies BFS17S, an NPN Silicon RF Transistor designed for use in broadband amplifiers operating at frequencies up to 1 GHz. It supports collector currents ranging from 1 mA to 20 mA.
The datasheet details maximum ratings such as a collector-emitter voltage of 15 V and a total power dissipation of 280 mW. It also lists specific electrical characteristics including DC current gain, transition frequency (fr), capacitance values, noise figure, and third-order intercept point under various conditions.
| Collector-emitter voltage (VCEO) | 15 V |
|---|---|
| Collector-base voltage (VCBO) | 25 V |
| Emitter-base voltage (VEBO) | 2.5 V |
| Collector current (IC) | 25 mA |
| Peak collector current | 50 mA |
| Total power dissipation (Ptot) | 280 mW |
| Junction temperature (Tj) | 150 °C |
| Transition frequency (fr) at IC=2mA | 1.4 GHz |
| Transition frequency (fr) at IC=25mA | 2.5 GHz |
The maximum collector-emitter voltage (VCEO) is 15 V.
It is designed for broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA.
The maximum junction temperature (Tj) is 150 °C.