BFS460L6 is a dual NPN silicon RF transistor with a high fT of 22 GHz, suitable for low voltage/low current applications, ideal for VCO modules and low noise amplifiers, a low noise figure of 1.1 dB at 1.8 GHz, the world's smallest SMD 6-pin leadless package, excellent ESD performance, and two integrated transistors (TR1, TR2: die as BFR460L3)
The document describes the Infineon BFS460L6, an NPN Silicon RF Twin Transistor designed for low voltage and low current applications. It is ideal for VCO modules and low noise amplifiers, offering a world's smallest SMD 6-pin leadless package with excellent ESD performance. The device is built with two transistors (TR1, TR2) similar to the BFR460L3.
| Noise figure at 1.8 GHz | 1.1 dB |
|---|---|
| Collector-emitter voltage (VCEO) | 4.5 V |
| Collector current (IC) | 50 mA |
| Junction temperature (Tj) | 150 °C |
The maximum collector-emitter voltage is 4.5 V when the ambient temperature is above 0°C.
The noise figure is a minimum of 1.1 dB when the frequency is 1.8 GHz.