BFS17W is a NPN silicon RF transistor for broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA
This document is a technical datasheet for the Infineon BFS17W, an NPN silicon RF transistor designed for broadband amplifiers up to 1 GHz. The device operates with collector currents ranging from 1 mA to 20 mA and is available in an SOT323 package.
The datasheet details maximum ratings such as a collector-emitter voltage of 15 V and total power dissipation of 280 mW at Tg < 93°C. It also provides comprehensive electrical characteristics including DC parameters like current gain (hFE) and AC parameters such as transition frequency, capacitance values, noise figure, and third-order intercept point.
| Collector-emitter voltage (VCEO) | 15 V |
|---|---|
| Collector-base voltage (VCBO) | 25 V |
| Emitter-base voltage (VEBO) | 2.5 V |
| Collector current (IC) | 25 mA |
| Total power dissipation (Ptot) @ Tg < 93°C | 280 mW |
| Junction temperature max | 150 °C |
| Noise figure (F) | 3.5 dB |
The continuous collector current (IC) is rated at 25 mA.
Yes, it is designed for broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA.