This datasheet provides the maximum ratings, electrical characteristics, and other information of BAW56S. BAW56S is a silicon switching diode produced by Onsemi. It has high switching speed and a double common anode configuration. The maximum ratings include reverse voltage, peak reverse voltage, forward current, surge forward current, total power dissipation, junction temperature, and storage temperature. The electrical characteristics include breakdown voltage, reverse current, forward voltage, etc.
This document is a technical datasheet for the Infineon Technologies AG BAW56 series of Silicon Switching Diodes. It details various package configurations including SOT23, SOT363, SC75, SC74, and SOT323.
The datasheet provides comprehensive electrical specifications such as a maximum reverse voltage (VR) of 80 V and a peak reverse voltage (VRRM) of 85 V. It also lists forward current capabilities up to 200 mA and surge currents up to 45 A, along with junction temperature limits.
| Diode reverse voltage (VR) | 80 V |
|---|---|
| Peak reverse voltage (VRRM) | 85 V |
| Forward current (IF) | 200 mA |
| Surge forward current | 45 A |
| Junction temperature (Tj) | 150 °C |
| Reverse recovery time (trr) | 4 ns |
The maximum forward current is 200 mA.
The maximum reverse voltage is 80 V.
The maximum junction temperature is 150 °C.