The document describes the VFT30-28, a gold metallized N-Channel enhancement mode MOSFET, intended for use in 28VDC large signal applications up to 400MHz.
The ASI VFT30-28 is a gold metallized N-channel enhancement mode MOSFET intended for use in 28VDC large signal applications up to 400MHz. It features an Omnigoid™ Metalization System and is housed in a .380 4L FLG package style.
| Operating Temperature Range | -65 °C to +150 °C |
|---|---|
| Maximum Power Dissipation (Ta=25°C) | 100W |
| Thermal Resistance Junction-to-Ambient | 1.75 °C/W |
| Operating Frequency Range | up to 400MHz |
It is a gold metallized N-channel enhancement mode MOSFET used in 28VDC large signal applications up to 400MHz.
The typical gain is 14 dB when operating at 30 W and 175 MHz.