ASI UML1SL is a NPN Silicon RF Power Transistor produced by Advanced Semiconductor Inc. Its maximum current is 2.0 A, maximum collector-emitter reverse voltage is 45 V, maximum emitter-collector reverse voltage is 25 V, and maximum emitter-base reverse voltage is 3.5 V.
This document is a datasheet for the ASI UML1SL, an NPN silicon RF power transistor designed in a .280 4L Pill package style. It features the Omnigold™ Metalization System and is manufactured by Advanced Semiconductor, Inc.
The datasheet provides maximum ratings for collector current, voltage, and power, along with operating temperature ranges. It also lists specific electrical characteristics such as breakdown voltages, current gain, capacitance, and power gain at various test conditions.
| Package Style | .280 4L Pill |
|---|---|
| Collector-Emitter Voltage (Vceo) | 25V |
| Storage Temperature Range | -65 °C to +150 °C |
| Collector-Emitter Breakdown Voltage (BVceo) | 24 V |
| Collector-Base Breakdown Voltage (BVcbo) | 45 V |
| Emitter-Base Breakdown Voltage (BVebo) | 3.5 V |
| Current Gain (hFE) | 15 to 120 |
| Input Capacitance (Cob) | 5.0 pF |
| Power Gain (Nb) | 13 dB |
The ASI UML1SL is an NPN silicon RF power transistor designed for a .280 4L pill package style.
The transistor dissipates a minimum of 31.8 W when the temperature is 25°C.