The VFT80-28 is an N-channel enhancement mode VHF power MOSFET designed for general purpose Class B power amplifier applications up to 175 MHz. The device features PG = 10 dB typical at 175 MHz and 30:1 load VSWR capability.
The ASI VFT45-28 is an N-Channel Enhancement Mode Power MOSFET designed for general purpose Class B Power Amplifier applications up to 175 MHz. Key features include a typical gain of 10 dB at 175 MHz and a 30:1 Load VSWR capability.
| Package Style | .380 4L FLG |
|---|---|
| Typical Gain | 10 dB at 175 MHz |
| Load VSWR Capability | 30:1 |
| Maximum Power Dissipation | 100 W |
| Operating Temperature Range | -65 °C to +200 °C |
| Storage Temperature Range | -65 °C to +150 °C |
| Operating Frequency | Up to 175 MHz |
The device is designed for applications up to 175 MHz.
The typical gain is 10 dB at 175 MHz.
Yes, it has a 30:1 Load VSWR capability with no degradation in output power.