This document describes the characteristics and features of the TVU020 NPN Silicon RF Power Transistor by ADVANCED SEMICONDUCTOR, INC. (ASI). The transistor features an input matching network and Omnigold™ metallization system.
The ASI TVU020 is an NPN silicon RF power transistor designed for applications requiring specific input matching networks. It features the Omnigold™ Metalization System and is packaged in a .400 BAL FLG(A) style.
Key electrical characteristics include a maximum collector current (Ic) of 11.0A and a maximum collector-emitter voltage (Vceo) of 28V. The device operates with a typical power dissipation of 20W at 860 MHz and supports a junction temperature range from -65°C to +200°C.
| Collector Current (Ic) | 11.0A |
|---|---|
| Collector-Emitter Voltage (Vceo) | 28 V |
| Collector-Base Voltage (Vcbo) | 60 V |
| Emitter-Base Voltage (Vebo) | 3.0 V |
| Power Dissipation (Pd) | 20 W |
| Operating Temperature (Tj) | -65 °C to +200 °C |
| Storage Temperature (Tstg) | -65 °C to +150 °C |
| Thermal Resistance (Rthjc) | 1.2 °C/W |
The order code is ASI10648.
The package style is .400 BAL FLG(A).