The ASI TVV010 is a NPN silicon RF power transistor with a maximum current of 10A, a maximum voltage of 60V and a maximum power dissipation of 140W.
The ASI TVV010 is an NPN silicon RF power transistor designed for specific applications. It utilizes the Omnigold™ Metalization System and is packaged in a 4L Stud style.
Key electrical characteristics include a collector-emitter voltage (Vceo) of 35V, a collector-base voltage (Vcbo) of 60V, and a maximum power dissipation of 140W at 25°C. The device operates within a junction temperature range of -65°C to +200°C.
| Package Style | 4L Stud |
|---|---|
| Metalization System | Omnigold™ |
| Collector-Emitter Voltage (Vceo) | 35V |
| Power Dissipation (Poiss) | 140 W @ Tc = 25 °C |
| Operating Junction Temperature (Tj) | -65 °C to +200 °C |
| Storage Temperature (Tstg) | -65 °C to +150 °C |
| Thermal Resistance (Rthjc) | 2.2 °C/W |
| Collector-Base Voltage (Vcbo) | 60V |
| Emitter-Base Voltage (Vebo) | 4.0V |
| Current Gain (hFE) | 10 to 100 |
| Power Gain (Poe) | 10 dB |
| Intermodulation Distortion (IMD) | -54 dBc |
The order code for the TVV010 is ASI10656.
The junction temperature (Tj) ranges from -65 °C to +200 °C.