The document describes the characteristics and features of the ASI TVU100 NPN Silicon RF Power Transistor, including parameters such as current, voltage, power, and frequency.
The document describes the ASI TVU100, an NPN silicon RF power transistor designed with an input matching network and Omnigold™ Metalization System. It is identified by order code ASI10651.
Key electrical characteristics include a maximum collector current (Ic) of 10A, a breakdown voltage (Vceo) of 35V, and a power dissipation of 140W at 25°C. The device operates within a junction temperature range of -65°C to +200°C.
| Collector-Emitter Voltage (Vceo) | 35 V |
|---|---|
| Base-Emitter Voltage (Bvebo) | 4.0 V |
| Power Dissipation (Poiss) | 140 W @Tg = 25 °C |
| Junction Temperature Range (Tt) | -65 °C to +200 °C |
| Storage Temperature Range (Tste) | -65 °C to +150 °C |
The ASI TVU100 is an NPN silicon RF power transistor.
The maximum power dissipation (Poiss) is 140 W @Tg = 25 °C.