The document describes the features and characteristics of the ASI TVU 025 RF power transistor.
This document is a datasheet for the ASI TVU025, an NPN silicon RF power transistor designed with an Omnigold™ Metalization System. The device features a .450 BAL FLG(A) package style and includes specifications for input matching networks.
The datasheet lists maximum ratings such as a collector current of 3.0A and a power dissipation of 135W at 25°C. It also provides electrical characteristics including breakdown voltages (BVcso, BVceo, BVeso) and capacitance values under specific test conditions.
| Package Style | .450 BAL FLG(A) |
|---|---|
| Metalization System | Omnigold™ Metalization System |
| Collector-Emitter Voltage (Vceo) | 30 V |
| Power Dissipation (Pd) | 135 W @ Tc = 25 °C |
| Operating Temperature Range (Tj) | -80°C to +200°C |
| Storage Temperature Range (Tstg) | -50 °C to +150 °C |