This document describes the features and characteristics of the TVU150 model from Advanced Semiconductor, Inc.
The ASI TVU150 is an NPN silicon RF power transistor designed for applications requiring high power handling. It features an Omnigold™ Metalization System and is housed in a 400 BAL FLG(C) package style. The device is manufactured by Advanced Semiconductor, Inc., located in North Hollywood, CA.
| Collector-Base Cutoff Current (Ices) | 10 mA |
|---|---|
| Current Gain (hfe) | 30 to 120 |
| Power Gain (Pe) | 9.0 dB |
| Intermodulation Distortion (IMD) | -52 dBc |
The maximum power dissipation is 300 W when the case temperature is 25°C.
The typical power gain is 9.0 dB at a frequency of 860 MHz.