This document describes the features and characteristics of the ASI TVU012, an electronic component product from Advanced Semiconductor, including parameters such as BVCEO, BVCER, BVEBO, ICES, hFE, etc. The product is an NPN silicon RF power transistor designed for 860MHz frequency, with input matching network and Omnigold™ metalization system.
This document is a datasheet for the ASI TVU012, an NPN silicon RF power transistor designed with an input matching network and Omnigold™ Metalization System. The device features a 4008LFLG package style.
Key specifications include a maximum collector current (Ic) of 10A, a breakdown voltage (Vceo) of 35V, and a power dissipation rating of 140W at 25°C. The operating temperature range is from -65°C to +200°C.
| Collector-Emitter Voltage (Vce) | 60 V |
|---|---|
| Emitter-Base Voltage (Vee) | 35V |
| Power Dissipation (Poiss) | 140 W @T. = 25°C |
| Operating Temperature Range | -65 °C to +200 °C |
| Storage Temperature (Tste) | -65 °C to +150 °C |
| Thermal Resistance (Ruc) | 1.6 °C/W |
| Package Style | .400 8L FLG |
The order code listed in the document is ASI10646.
The device operates from -65 °C to +200 °C.