This document is the datasheet of ASI TVV005, introducing the features and characteristics of the product, including the maximum current, maximum voltage, maximum power, maximum working temperature, etc.
The document is a datasheet for the ASI TVV005, an NPN silicon RF power transistor designed with the Omnigold™ Metalization System. It provides key specifications including a maximum collector current of 4.0A and a typical operating temperature range from -65°C to +200°C.
The datasheet lists detailed electrical characteristics such as breakdown voltages (BVceo, BVcero), capacitance, power gain at 225 MHz, and intermodulation distortion performance under specific load conditions.
| Collector-Emitter Voltage (Vceo) | 4.0V |
|---|---|
| Power Dissipation (Pdiss) | 50 W @ Tc = 25°C |
| Operating Temperature Range | -65 °C to +200 °C |
| Storage Temperature Range (Tstg) | -65 °C to +200 °C |
| Collector-Base Breakdown Voltage (BVcero) | 30 V |
| Package Style | .280 4L STUD |
The device has a maximum power dissipation rating of 50 W when the temperature is 25°C.
The component operates from -65 °C to +200 °C and can be stored within the same range.
The typical capacitance value is 35 pF when tested with Vop = 28 V.