The document provides information about the features and characteristics of the ASI TVV007 model, including maximum ratings, pin layout, and dimensions.
The ASI TVV007 is an NPN silicon RF power transistor designed for high-frequency applications. It features the Omnigold™ Metalization System and is packaged in a .5006L FLG style.
Key specifications include a maximum collector-emitter voltage (Vceo) of 35V and a maximum collector current (Ic) of 1.0A. The device operates over a temperature range of -65°C to +200°C.
| Package Style | .5006L FLG |
|---|---|
| Collector-Emitter Voltage (Vceo) | 35 V |
| Power Dissipation (Pd) | 140 W @ Tc = 25 °C |
| Operating Temperature Range | -65 °C to +200 °C |
| Storage Temperature Range | -65 °C to +150 °C |
The ASI TVV007 is designed for use as an NPN silicon RF power transistor.
The maximum power dissipation is 140 W when the case temperature is 25 °C.
The operating temperature range is from -65 °C to +200 °C.