ASI TVU014 NPN Silicon RF Power Transistor Datasheet

ASI TVU014 is a NPN silicon RF power transistor featuring Omnigold™ metallization system, maximum current of 2 x 2.6 A, maximum voltage of 45 V, maximum power of 65 W, maximum operating temperature range of -65 °C to +200 °C, maximum storage temperature range of -65 °C to +150 °C, and thermal resistance of 2.5 °C/W.


ASI TVU014 NPN Silicon RF Power Transistor Datasheet - cover page
Brand
NPN
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
1
File format
PDF
File size
12 KB
Published
11 June, 2012
Updated
30 September, 2023
MD5 checksum
48B7033D273973932CD56E169E883A54

About this manual

The ASI TVU014 is an NPN silicon RF power transistor designed for specific applications, utilizing the Omnigold™ Metalization System. It is available in a .250 BAL FLG package style.

Key electrical characteristics include a maximum collector-emitter voltage (Vceo) of 45V and a maximum collector-base voltage (Vcbo) of 25V. The device supports a maximum power dissipation of 65W at a case temperature of 25°C.

What's inside

  • Description
  • Features
  • Maximum Ratings
  • Characteristics

Specifications

Package Style.250 BAL FLG
Maximum Power Dissipation65 W
Operating Temperature Range-65 °C to +200 °C
Storage Temperature Range-65 °C to +150 °C
Collector-Emitter Voltage (Vceo)45 V
Collector-Base Voltage (Vcbo)25 V
Emitter-Base Voltage (Vebo)3.0 V
Input Capacitance (Cies)20 pF
Power Gain (Pg)8.5 dB
Intermodulation Distortion (IMD)-50 dBc

Frequently asked questions

What is the maximum power dissipation rating of the ASI TVU014 transistor?

The device has a maximum power dissipation of 65 W when the case temperature is 25°C.

What are the operating and storage temperature limits for this transistor?

The unit operates between -65 °C and +200 °C, with a storage range of -65 °C to +150 °C.

What is the typical capacitance between collector and emitter at 1.0 MHz?

The typical value for Coss is 20 pF when Vce equals 25V.

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