The document provides information about the features and characteristics of the ASI MLN1030SS model, including minimum, maximum, and typical values for various parameters.
The ASI MLN1030SS is an NPN silicon RF power transistor designed for high-frequency applications. It features the Omnigold™ Metalization System and is packaged in a .205 4L stud configuration.
The document details maximum ratings including a collector current of 10A and a power dissipation of 140W at 25°C. It also lists electrical characteristics such as breakdown voltages and transition frequency.
| Collector-Emitter Voltage | 60 V |
|---|---|
| Emitter-Base Voltage | 35 V |
| Power Dissipation | 140 W @ Te = 25°C |
| Operating Temperature | -65 °C to +200 °C |
| Storage Temperature | -65 °C to +150 °C |
| Thermal Resistance | 20 °C/W |
| Package Style | .205 4L STUD |
The maximum power dissipation is 140 W when the case temperature is 25°C.
The transistor can be stored between -65°C and +150°C.