This document is a product datasheet for the ASI ULBM5 model, describing its features and characteristics, such as maximum operating current, maximum operating voltage, maximum power dissipation, etc.
This document is a technical datasheet for the ASI ULBM5, an NPN silicon RF power transistor. It specifies that the device utilizes the Omnigold™ Metalization System and comes in a .280 4L stud package style.
The datasheet provides maximum ratings including collector-emitter voltage (Vceo) of 36 V and total power dissipation (Pg) of 37 W. It also lists typical electrical characteristics such as current gain (hFE) at various frequencies up to 470 MHz.
| Package Style | .280 4L STUD |
|---|---|
| Metalization System | Omnigold™ Metalization System |
| Collector-Emitter Voltage (Vceo) | 36 V |
| Emitter-Base Voltage (Vebo) | 18 V |
| Collector-Base Voltage (Vcbo) | 36 V |
| Emitter-Source Voltage (VeSO) | 4.0 V |
| Total Power Dissipation (Pg) | 37 W@ To= 25°C |
| Operating Temperature Range (Tj) | -65 °C to +200 °C |
The maximum collector current (Ic) is rated at 20A.
The typical power dissipation (Pdc) is 37 W at a case temperature of 25°C.
The device operates within a junction temperature range from -65°C to +150°C.