This datasheet provides the characteristics of ASI ULBM45, including rated current, voltage and power.
This document is a datasheet for the ASI ULBM45, an NPN silicon RF power transistor. It specifies that the device utilizes the Omnigold™ Metalization System and comes in a .500 6L FLG package style.
The datasheet provides maximum ratings including collector current (Ic) of 10.0A, collector-emitter voltage (Vceo) of 36 V, and power dissipation (Po) of 175 W at 25 °C. It also lists operating temperature ranges from -65 °C to +200 °C.
| Package Style | .500 6L FLG |
|---|---|
| Metalization System | Omnigold™ |
| Collector Current (Ic) | 10.0A |
| Collector-Emitter Voltage (Vceo) | 36 V |
| Power Dissipation (Po) at 25°C | 175 W |
| Operating Temperature Range | -65 °C to +200 °C |
The maximum collector current rating is 10.0 A.
The maximum power dissipation is 175 W at 25 °C.