The document describes the features and characteristics of the ASI UHBS15-1, which is an NPN silicon RF power transistor with excellent performance and high reliability.
The ASI UHBS15-1 is an NPN silicon RF power transistor designed with the Omnigold™ Metalization System. It is available in a 2306L FLG package style and is manufactured by Advanced Semiconductor, Inc.
The document provides maximum ratings including a collector current of 2.0A and a power dissipation of 57.5W at 25°C. It also lists key electrical characteristics such as breakdown voltages and transition frequency, along with physical package dimensions in inches and millimeters.
| Package Style | 2306L FLG |
|---|
The maximum power dissipation is 57.5 W when the case temperature is 25 °C.
The operating temperature range is -65 °C to +200 °C, and the storage temperature range is -65 °C to +150 °C.