This is a datasheet of ASI ULBM0.5, which introduces its features and characteristics including BVCEO, BVCES, BVEBO, hFE, Cob, PG, etc.
This document is a datasheet for the ASI ULBMO.5, an NPN silicon RF power transistor. It highlights the use of the Omnigold™ Metalization System and provides maximum ratings for collector current, voltage, and power dissipation.
| Collector-Emitter Voltage (Vceo) | 28 V |
|---|---|
| Collector-Base Voltage (Vcbo) | 12V |
| Emitter-Base Voltage (Vebo) | 4.0V |
| Power Dissipation (Poiss) | 2.5 W @ Tc. =25 °C |
| Operating Temperature (Tt) | -65 °C to +200 °C |
| Storage Temperature (Tste) | -65 °C to +150 °C |
| Thermal Resistance (Ruc) | 70 °C/W |
| Package Style | .205 4L PILL |
The maximum power dissipation is 2.5 W when the case temperature is 25 °C.
The operating temperature range is from -65 °C to +200 °C.
The maximum collector-emitter voltage is 28 V.