This document describes the features and characteristics of the ASI UHBS60-2 model, including its maximum ratings, current, voltage, and frequency parameters.
This document is a datasheet for the ASI UHBS60-2, an NPN Silicon RF Power Transistor designed with the Omnigold™ Metalization System. It provides comprehensive technical specifications including maximum ratings such as collector current (9.0A) and power dissipation (190 W).
| Collector-Source Voltage (Vceso) | 50 V |
|---|---|
| Emitter-Source Voltage (Vero) | 26V |
| Collector-Emitter Voltage (Voces) | 50 V |
| Source-Output Voltage (Vso) | 4.0V |
| Power Dissipation (Poiss) | 190 W @ Tc = 25 °C |
| Operating Temperature Range (Tt) | -65 °C to +200 °C |
| Storage Temperature Range (Tste) | -65 °C to +150 °C |
The maximum power dissipation is 190 W when the case temperature is 25 °C.
The device operates from -65 °C to +200 °C.