This datasheet is about ASI UHBS60-1 parameters, including BVCBO, BVCES, BVCEO, BVEBO, ICES, ICBO, hFE, Cob, PG, ηηC, IC, VCBO, VCEO, VCES, VEBO, PDISS, TJ, TSTG, θθJC.
The document describes the ASI UHBS60-1, an NPN silicon RF power transistor designed with the Omnigold Metalization System. It is identified by order code ASI10672.
The datasheet lists maximum ratings including a collector current of 9.0A and a power dissipation of 190W at 25°C. It also provides electrical characteristics such as breakdown voltages, current gains, and capacitance values.
| Package Style | .2306L FLG |
|---|---|
| Power Dissipation (Pdiss) | 190 W @ Tc = 25 °C |
| Operating Temperature Range (Tj) | -65 °C to +200 °C |
| Storage Temperature Range (Tstg) | -65 °C to +150 °C |
The maximum power dissipation is 190 W when the case temperature is 25 °C.
The maximum collector-emitter voltage rating is 50 V.