The ASI ULBM10 is a NPN silicon RF power transistor designed for Omnigold™ Metalization System, with maximum current IC of 2.5A, maximum collector-base reverse voltage VCBO of 36V, maximum collector-emitter open voltage VCEO of 16V, maximum collector-emitter reverse voltage VCES of 36V, maximum emitter-base reverse voltage VEBO of 4.0V, maximum power dissipation PDISS of 58W, operating temperature range of TJ-65℃ to +200℃, storage temperature range of TSTG-65℃ to +150℃, and thermal resistance θθJC of 7.0℃/W.
This document is a technical datasheet for the ASI ULBM10, an NPN silicon RF power transistor designed with an Omnigold™ Metalization System. The device features a .280 4L stud package style and is manufactured by Advanced Semiconductor, Inc.
The datasheet provides maximum ratings including collector-emitter voltage (Vceo) of 36 V and power dissipation of 58 W at 25°C. It also lists key electrical characteristics such as current gain cutoff frequency (fT) of 765 MHz and transition frequency (ft) of 4150 MHz under specific test conditions.
| Package Style | .280 4L STUD |
|---|---|
| Metalization System | Omnigold™ Metalization System |
| Maximum Collector-Emitter Voltage (Vceo) | 36 V |
| Maximum Power Dissipation (Pd) | 58 W @ To = 25°C |
| Current Gain Cutoff Frequency (fT) | 765 MHz |
| Transition Frequency (ft) | 4150 MHz |
The ASI ULBM10 is an NPN silicon RF power transistor.