ASI ULBM10 NPN SILICON RF POWER TRANSISTOR Manual

Update: 01 October, 2023

The ASI ULBM10 is a NPN silicon RF power transistor designed for Omnigold™ Metalization System, with maximum current IC of 2.5A, maximum collector-base reverse voltage VCBO of 36V, maximum collector-emitter open voltage VCEO of 16V, maximum collector-emitter reverse voltage VCES of 36V, maximum emitter-base reverse voltage VEBO of 4.0V, maximum power dissipation PDISS of 58W, operating temperature range of TJ-65℃ to +200℃, storage temperature range of TSTG-65℃ to +150℃, and thermal resistance θθJC of 7.0℃/W.

---

File format: PDF

Size: -

MD5 Checksum: B59AE33C4BFD41DD739226F274F6B95C

Publication date: 11 June, 2012

Downloads: -

PDF Link: ASI ULBM10 NPN SILICON RF POWER TRANSISTOR Manual PDF